Dual panel type organic electroluminescent display device and method of fabricating the same

ABSTRACT

A dual panel type organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, an array element layer on an inner surface of the first substrate and including a thin film transistor, a connection pattern on the array element layer and electrically connected to the thin film transistor, a first electrode on an inner surface of the second substrate, a partition wall on the first electrode in a non-pixel area between adjacent pixel areas, an organic light-emitting layer on the first electrode in the pixel area, a second electrode on the organic light-emitting layer in the pixel area and electrically connected to the connection pattern, a moisture absorption layer on the partition wall, and a seal pattern between the first and second substrates along a peripheral portion.

The present invention claims the benefit of Korean Patent ApplicationNos. P2003-0099919 filed on Dec. 30, 2003, P2003-0099937 filed on Dec.30, 2003, and P2003-0101281 filed on Dec. 31, 2003, all of which arehereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic electroluminescent displaydevice and method of fabricating the same, and more particularly, to adual panel type organic electroluminescent display device and a methodof fabricating the same.

2. Discussion of the Related Art

Among flat panel display devices, since an organic electroluminescentdisplay device is self-luminescent and does not require an additionallight source, the organic electroluminescent display device has a wideviewing angle, high contrast ratio, and a small size and is lightweight, as compared to a liquid crystal display device. The organicelectroluminescent display device also has a low power consumption. Inaddition, the organic electroluminescent display device is driven by alow direct current voltage and a short response time. Because allelements of the organic electroluminescent display device are solid, theorganic electroluminescent display device can be used in a wide range oftemperatures and is unlikely to be damaged by external impacts.Furthermore, the organic electroluminescent display device can havereduced manufacturing costs. Especially, the organic electroluminescentdisplay device has simple manufacturing processes as compared with theliquid crystal display device or a plasma display panel, and onlydeposition and encapsulation apparatuses are used for manufacturing theorganic electroluminescent display device.

FIG. 1 is a cross-sectional view of an organic electroluminescentdisplay device according to the related art. In FIG. 1, the organicelectroluminescent display device includes a first substrate 10 and asecond substrate 60 facing the first substrate with a predeterminedspace therebetween. An array element layer AL is formed on an innersurface of the first substrate 10. The array element layer AL includes athin film transistor T formed at each pixel region P, which is a minimumunit for an image. An organic electroluminescent diode E is formed onthe array element layer AL. The organic electroluminescent diode Eincludes a first electrode 48, an organic light-emitting layer 54 and asecond electrode 56 sequentially formed. Light emitted from the organiclight-emitting layer 54 is transmitted toward a transparent electrode ofthe first and second electrodes 48 and 56. The organicelectroluminescent display device is categorized into a top emissionmode and a bottom emission mode depending on an emission direction.Here, the organic electroluminescent display device has the bottomemission mode, where the first electrode 48 is formed of a transparentmaterial and the light emitted from the organic light-emitting layer 54is transmitted through the first electrode 48.

The second substrate 60 serves as a sort of an encapsulation substrate.A concavity 62 is formed at an inner surface of the second substrate 60and a desiccant 64 is disposed within the concavity 62. The desiccant 64removes any external moisture that may permeate into a space between thefirst and second substrates 10 and 60 and protects the organicelectroluminescent diode E. A seal pattern 70 is formed along peripheralportions of the first and second substrates 10 and 60 and seals thefirst and second substrates 10 and 60.

FIG. 2A is a plan view of a pixel for an organic electroluminescentdisplay (OELD) device of the related art and FIG. 2B is across-sectional view along the line II-II of FIG. 2B. In FIGS. 2A and2B, a buffer layer 12 is formed on a substrate 10, and a semiconductorlayer 14 and a capacitor electrode 16 are formed on the buffer layer 10with a space therebetween. A gate insulating layer 18 and a gateelectrode 20 are sequentially formed on a center portion of thesemiconductor layer 14. The semiconductor layer 14 includes an activearea 14 a corresponding to the gate electrode 20 and source and drainareas 14 b and 14 c disposed at both sides of the active area 14 a. Agate line 22 in a first direction is also formed on the same layer asthe gate electrode 20.

A first passivation layer 24 covers the gate electrode 20 and thecapacitor electrode 16. A power electrode 26 is formed over the firstpassivation layer 24 corresponding to the capacitor electrode 16, andthe power electrode 26 extends from a power supply line 28, which isformed in a second direction crossing the first direction.

A second passivation layer 30 is formed on an entire surface of thesubstrate 10 including the power electrode 26. The first and secondpassivation layers 24 and 30 include first and second contact holes 32and 34 therethrough. The first contact hole 32 exposes the drain area 14c of the semiconductor layer 14 and the second contact hole 34 exposesthe source area 14 b of the semiconductor layer 14. The secondpassivation layer 30 also has a third contact hole 36 exposing a part ofthe power electrode 26.

A source electrode 38 and a drain electrode 40 are formed on the secondpassivation layer 30. The drain electrode 40 is connected to the drainarea 14 c of the semiconductor layer 14 through the first contact hole32. The source electrode 38 is connected to the source area 14 b of thesemiconductor layer 14 through the second contact hole 34 and the powerelectrode 26 through the third contact hole 36.

As shown in FIG. 2A, a data line 42 is formed on the same layer as thesource and drain electrodes 38 and 40 in the second direction. The dataline 42 crosses the gate line 22 to define a pixel region P. A thirdpassivation layer 44 covers the drain electrode 40 and the sourceelectrode 38. The third passivation layer 44 has a drain contact hole 46exposing a part of the drain electrode 40.

A light-emitting area EA is defined on the third passivation layer 44,and a first electrode 48 is formed in the light-emitting area EA. Thefirst electrode 48 is connected to the drain electrode 40 through thedrain contact hole 46. An inter insulating layer 50 is formed on thefirst electrode 48 and the third passivation layer 44. The interinsulating layer 50 exposes the main portion of the first electrode 48and covers edges of the first electrode 48. An organic light-emittinglayer 54 is formed on the first electrode 48 and the inter insulatinglayer 50 in the light-emitting area EA. A second electrode 56 is formedon an entire surface of the substrate 10 including the organiclight-emitting layer 54.

The semiconductor layer 14, the gate electrode 20, the source electrode38 and the drain electrode 40 constitute a thin film transistor. Thethin film transistor of FIG. 2B is a driving thin film transistor Td.The driving thin film transistor Td is disposed between a switching thinfilm transistor Ts and the power supply line 28. The switching thin filmtransistor Ts is located at a crossing portion of the gate line 22 andthe data line 42, and has the same structure as the driving thin filmtransistor Td.

Here, the gate electrode 20 of the driving thin film transistor Td isconnected to the switching thin film transistor Ts and the drainelectrode 40 of the driving thin film transistor Td is formed in anisland shape. The switching thin film transistor Ts includes anothergate electrode extending from the gate line 22 and another sourceelectrode extending from the data line 42.

The power supply line 28 (including the power electrode 26) and thecapacitor electrode 16 overlap each other to form a storage capacitorCst.

The bottom emission mode OELD device is manufactured by attaching asubstrate including array elements and organic luminescent diodes andanother substrate for encapsulation. Since the yield of the OELD devicedepends on the yields of the array elements and the organic luminescentdiodes, in the OELD device having the above structure, the wholeprocessing yield is largely affected by the later organic luminescentdiode process. Thus, even if the array elements are properlymanufactured, if the organic light-emitting layer to be formed to athickness of about 1,000 Å is improperly manufactured due to impuritiesor other factors, the resulting OELD device will be rejected as bad. Inthis case, all manufacturing costs and source materials required for thearray elements are wasted, and the product yield is lowered.

Although the bottom emission mode OELD device has an excellent stabilityand a certain degree of freedom in its manufacturing processes, thebottom emission mode OELD device has a reduced aperture ratio. Thus, thebottom emission mode OELD device is not generally suitable for a highaperture device.

On the other hand, a top emission mode OELD device has a high apertureratio, and is easy to manufacture. Additionally, the top emission modeOELD device has a long lifetime. However, in the top emission mode OELDdevice, since a cathode electrode is generally disposed over the organiclight-emitting layer, a choice of material with which to make thecathode electrode is limited. Accordingly, the transmittance of light islimited, and a light-emitting efficacy is reduced. Furthermore, in orderto improve the light transmittance, the passivation layer should beformed as a thin film, whereby the exterior moisture and air are notfully blocked.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a dual panel typeorganic electroluminescent display device and a method of fabricatingthe same that substantially obviate one or more of the problems due tolimitations and disadvantages of the related art.

An object of the present invention is to provide a dual panel typeorganic electroluminescent display device and a method of fabricatingthe same having a high aperture ratio and high definition images.

Another object of the present invention is to provide a dual panel typeorganic electroluminescent display device and a method of fabricatingthe same having an improved yield and productivity.

Another object of the present invention is to provide a dual panel typeorganic electroluminescent display device and a method of fabricatingthe same that are reliable.

Additional features and advantages of the invention will be set forth inthe description which follows and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, a dualpanel type organic electroluminescent display device includes first andsecond substrates facing and spaced apart from each other, an arrayelement layer on an inner surface of the first substrate and including athin film transistor, a connection pattern on the array element layerand electrically connected to the thin film transistor, a firstelectrode on an inner surface of the second substrate, a partition wallon the first electrode in a non-pixel area between adjacent pixel areas,an organic light-emitting layer on the first electrode in the pixelarea, a second electrode on the organic light-emitting layer in thepixel area and electrically connected to the connection pattern, amoisture absorption layer on the partition wall, and a seal patternbetween the first and second substrates along a peripheral portion.

In another aspect, a dual panel type organic electroluminescent displaydevice includes first and second substrates facing and spaced apart fromeach other, an array element layer on an inner surface of the firstsubstrate and including a thin film transistor, a connection pattern onthe array element layer and electrically connected to the thin filmtransistor, a first electrode on an inner surface of the secondsubstrate, a partition wall on the first electrode in a non-pixel areabetween adjacent pixel areas, the partition wall including sub partitionwalls, each of which surrounds a pixel area, an organic light-emittinglayer on the first electrode in the pixel area, a second electrode onthe organic light-emitting layer in the pixel area and electricallyconnected to the connection pattern, a moisture absorption layer betweenadjacent sub partition walls, and a seal pattern between the first andsecond substrates along a peripheral portion.

In another aspect, a method of fabricating a dual panel type organicelectroluminescent display device includes steps of forming an arrayelement layer on a first substrate, the array element layer including athin film transistor, forming a connection pattern on the array elementlayer, the connection pattern electrically connected to the thin filmtransistor, forming a first electrode on a second substrate, forming apartition wall on the first electrode in a non-pixel area betweenadjacent pixel areas, the partition wall having reversely tapered sides,forming an organic light-emitting layer on the first electrode in thepixel area, forming a second electrode on the organic light-emittinglayer in the pixel area, forming a moisture absorption layer on thepartition wall, and attaching the first and second substrates such thatthe second electrode is connected to the connection pattern, wherein theorganic light-emitting layer and the second electrode are automaticallypatterned due to the partition wall.

In another aspect, a method of fabricating a dual panel type organicelectroluminescent display device includes steps of forming an arrayelement layer on a first substrate, the array element layer including athin film transistor, forming a connection pattern on the array elementlayer, the connection pattern electrically connected to the thin filmtransistor, forming a first electrode on a second substrate, forming apartition wall on the first electrode in a non-pixel area betweenadjacent pixel areas, the partition wall having reversely tapered sidesand including sub partition walls, each of which surrounds a pixel area,forming an organic light-emitting layer on the first electrode in thepixel area, forming a second electrode on the organic light-emittinglayer in the pixel area, forming a moisture absorption layer betweenadjacent sub partition walls, and attaching the first and secondsubstrates such that the second electrode is connected to the connectionpattern, wherein the organic light-emitting layer and the secondelectrode are automatically patterned due to the partition wall.

In another aspect, a dual panel type organic electroluminescent displaydevice includes first and second substrates facing and spaced apart fromeach other, an array element layer on an inner surface of the firstsubstrate and including a thin film transistor, a connection pattern onthe array element layer and electrically connected to the thin filmtransistor, a moisture absorption layer covering the array element layerand exposing the connection pattern, an organic electroluminescent diodeon an inner surface of the second substrate and electrically connectedto the connection pattern, and a seal pattern between the first andsecond substrates along a peripheral portion.

In another aspect, a method of fabricating a dual panel type organicelectroluminescent display device includes steps of forming an arrayelement layer on a first substrate, the array element layer including athin film transistor, forming a connection pattern on the array elementlayer, the connection pattern electrically connected to the thin filmtransistor, forming a moisture absorption layer covering the arrayelement layer and exposing the connection pattern, forming an organicelectroluminescent diode on a second substrate, forming a seal patternon one of the first substrate and the second substrate along aperipheral portion, and attaching the first and second substrates suchthat the electroluminescent diode is connected to the connectionpattern.

In another aspect, a dual panel type organic electroluminescent displaydevice includes first and second substrates facing and spaced apart fromeach other, a plurality of gate lines, a plurality of data lines and aplurality of power lines on the first substrate, the plurality of gatelines crossing the plurality of data lines and the plurality of powerlines to define a plurality of pixel areas, a switching element at eachpixel area, the switching element including a switching thin filmtransistor and a driving thin film transistor, a storage capacitor ateach pixel area and connected to the switching element, a connectionpattern electrically connected to the driving thin film transistor, amoisture absorption layer of a hygroscopic conductive material over thestorage capacitor, an organic electroluminescent diode on an innersurface of the second substrate and including a first electrode, anorganic light-emitting layer and a second electrode, wherein the organicelectroluminescent diode is electrically connected to the connectionpattern.

In another aspect, a dual panel type organic electroluminescent displaydevice includes first and second substrates facing and spaced apart fromeach other, a pixel driving part on an inner surface of the firstsubstrate, the pixel driving part including a metal line group and athin film transistor, the metal line group including a gate line, a dataline and a power line, the thin film transistor being activated byvoltage applied by the metal line group, a connection pattern on thepixel driving part and electrically connected to the thin filmtransistor, an organic electroluminescent diode on an inner surface ofthe second substrate and electrically connected to the thin filmtransistor through the connection pattern, and a moisture absorptionlayer on the pixel driving part except areas corresponding to the metalline group and the thin film transistor, the moisture absorption layerincluding a hygroscopic conductive material.

In another aspect, a dual panel type organic electroluminescent displaydevice includes first and second substrates facing and spaced apart fromeach other, a thin film transistor on an inner surface of the firstsubstrate, a connection pattern connected to the thin film transistor,an organic electroluminescent diode on an inner surface of the secondsubstrate and electrically connected to the thin film transistor throughthe connection pattern, and a moisture absorption layer on an innersurface of one of the first and second substrates.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory, andare intended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiments of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a cross-sectional view of an organic electroluminescentdisplay device according to the related art.

FIG. 2A is a plan view of a pixel for an organic electroluminescentdisplay device of the related art.

FIG. 2B is a cross-sectional view along the line II-II of FIG. 2B.

FIG. 3 is a cross-sectional view of a dual panel type organicelectroluminescent display device according to a first embodiment of thepresent invention.

FIG. 4 is a cross-sectional view of a dual panel type organicelectroluminescent display device according to a second embodiment ofthe present invention.

FIG. 5 is a schematic plan view of a substrate for the dual panel typeorganic electroluminescent display device according to the secondembodiment of the present invention.

FIG. 6A is a cross-sectional view of a dual panel type organicelectroluminescent display device according to a third embodiment of thepresent invention.

FIG. 6B is a view magnifying the region B of FIG. 6A.

FIG. 6C is a plan view of a substrate for the dual panel type organicelectroluminescent display device.

FIG. 7 is a flow chart illustrating a manufacturing process of anexample of a dual panel type organic electroluminescent display deviceaccording to the present invention.

FIG. 8 is a cross-sectional view of a dual panel type organicelectroluminescent display device according to a fourth embodiment ofthe present invention.

FIG. 9 is a plan view illustrating a lower substrate for the dual paneltype organic electroluminescent display device of FIG. 8.

FIG. 10 is a cross-sectional view of a dual panel type organicelectroluminescent display device according to a fifth embodiment of thepresent invention.

FIG. 11 is a flow chart illustrating a manufacturing process of anotherexample of a dual panel type organic electroluminescent display deviceaccording to the present invention.

FIG. 12A is a plan view illustrating a substrate for a dual panel typeorganic electroluminescent display device according to a sixthembodiment of the present invention.

FIG. 12B is a cross-sectional view along the line XII-XII of FIG. 12A.

FIG. 13 is a cross-sectional view of a dual panel type organicelectroluminescent display device according to the sixth embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIG. 3 is a cross-sectional view of a dual panel type organicelectroluminescent display (OELD) device according to a first embodimentof the present invention. In FIG. 3, the dual panel type organicelectroluminescent display (OELD) device includes a first substrate 110and a second substrate 130 that are spaced apart and face each other. Anarray element layer A including a plurality of thin film transistors Tis formed on an inner surface of the first substrate 110. A plurality ofconnection patterns 120 having a predetermined thickness are formed onthe array element layer A. Each connection pattern 120 is connected toeach thin film transistor T.

The predetermined thickness of the connection patterns 120 may beselected from a thickness range such that a pixel driving part and anemission part formed on different substrates are electrically connectedto each other by the connection patterns 120. Thus, the thickness of theconnection patterns 120 corresponds to a cell gap between the substrates110 and 130.

The thin film transistors T of FIG. 3 may serve as a driving thin filmtransistor for providing an organic electroluminescent diode withcurrents and for controlling brightness of emitted light. The thin filmtransistors T may have an inverted staggered structure using amorphoussilicon.

A first electrode 132 is formed on an entire inner surface of the secondsubstrate 130, and an insulating pattern 138 and a partition wall 140are sequentially formed on the first electrode 132 in a non-pixel areaNP corresponding to a border portion between adjacent pixel areas P. Thepartition wall 140 is reversely tapered and has a certain thickness. Anorganic light-emitting layer 142 and a second electrode 144 aresequentially formed on the first electrode 132 between adjacentpartition walls 140 and between adjacent insulating patterns 138. Theorganic light-emitting layer 142 and the second electrode 144 arepatterned due to the partition wall 140, and do not require additionalpatterning processes. Thus, the total thickness of the partition wall140 and the insulating pattern 138 is selected from a range such thatthe organic light-emitting layer 142 and the second electrode 144 aredivided into each pixel area P by the partition wall 140 and theinsulating pattern 138.

The organic light-emitting layer 142 includes red, green and blueluminous layers 142 a, 142 b and 142 c, each of which corresponds to therespective pixel area P. The first and second electrodes 132 and 144 andthe organic light-emitting layer 142 interposed therebetween form anorganic electroluminescent diode E.

The first electrode 132 may be formed of a transparent material so thatlight emitted from the organic light-emitting layer 142 is transmittedthrough the first electrode 132 to display an image as a top emissionmode. For example, if the first electrode 132 functions as an anodeelectrode and the second electrode 144 acts as a cathode electrode, thefirst electrode 132 may be formed of a transparent conductive materialsuch as indium tin oxide (ITO).

The first and second substrates 110 and 130 are attached by a sealpattern 150 formed in peripheral portions of the substrates 110 and 130.

In the dual panel type OELD device of the first embodiment, since thearray elements and the organic electroluminescent diodes are formed ondifferent substrates, the yield and productivity are improved, and thelifetime of the device is effectively increased. Additionally, the thinfilm transistor is easily designed; a high aperture ratio and a highresolution are obtained; and its reliability is increased due to the topemission mode. Moreover, because the organic light-emitting layer andthe second electrode are automatically patterned due to the partitionwall without an additional shadow mask, the process efficiency isimproved.

In the first embodiment, to display a full color image, red, blue greenluminous layers, which emit red, green and blue light, respectively, areused. This may be referred to as an independent luminescent method.Although not shown in the figure, instead of the independent luminescentmethod, an additional full color element, such as a single structure ofa color filter layer or a double structure of a color filter layer andcolor-changing mediums (CCM), may be used. In the device including sucha full color element, the organic light-emitting layer emits onlysubstantially monochromatic light, for example.

The dual panel type OELD device may have a problem that there is noadditional space for fixing desiccant, which absorbs moisture within thedevice. More particularly, in the related art OELD device, since noelement is formed on the upper substrate, the desiccant could beattached on the inner surface of the upper substrate. On the other hand,the dual panel type OELD device has no spare space for the desiccantbecause the pixel driving part and the emission part are formed onrespective substrates.

FIG. 4 is a cross-sectional view of a dual panel type organicelectroluminescent display (OELD) device according to a secondembodiment of the present invention. The parts different from the firstembodiment will be mainly explained.

As illustrated in FIG. 4, the dual panel type OELD device includes afirst substrate 210 and a second substrate 250 that are spaced apart andface each other. An array element layer A including a plurality of thinfilm transistors T is formed on an inner surface of the first substrate210. A plurality of connection patterns 240 are formed on the arrayelement layer A to be connected to the plurality of thin filmtransistors T.

A first electrode 252 is formed on an entire inner surface of the secondsubstrate 250, and an insulating pattern 254 and a partition wall 256are sequentially formed on the first electrode 252 in a non-pixel areaNP corresponding to a border portion between adjacent pixel areas P,each of which is a minimum unit for an image. The partition wall 256 isreversely tapered and has a certain thickness. An organic light-emittinglayer 258 and a second electrode 260 are sequentially formed on thefirst electrode 252 in the pixel area P, that is, between adjacentpartition walls 256 and between adjacent insulating patterns 254. Theorganic light-emitting layer 258 and the second electrode 260 areautomatically patterned due to the partition wall 256, and do notrequire additional patterning processes. Thus, the total thickness ofthe partition wall 256 and the insulating pattern 254 is selected from arange such that the organic light-emitting layer 258 and the secondelectrode 260 are divided into each pixel area P due to the partitionwall 256.

The first electrode 252, the organic light-emitting layer 258, and thesecond electrode 260 constitute an organic electroluminescent diode E.

A seal pattern 270 is formed along peripheral portions of the first andsecond substrates 210 and 250 and seals the first and second substrates210 and 250.

In this embodiment, a moisture absorption layer 262 is formed on thepartition wall 256. The moisture absorption layer 262 may be formed ofone of a hygroscopic oxide material such as calcium oxide (CaO) orbarium oxide (BaO) and other hygroscopic insulating materials. If themoisture absorption layer 262 formed on the partition wall 256 has aconductive property, the adjacent electrodes 260 with the partition wall256 therebetween may be shorted due to the moisture absorption layer262. Thus, it is preferable that the moisture absorption layer 262 bemade of an insulating material. The moisture absorption layer 262 may beformed by one of an inkjet method, a roll printing method, a screenprinting method, and a bar coating method using a source material of aliquid phase.

In this embodiment, since the moisture absorption layer is formed on thepartition wall, no additional space is required for installing themoisture absorption element. In the figure, although only two pixelsincluding six pixel areas P are shown, the device includes more pixels.Thus, for the area of the moisture absorption layer is large as comparedto the related art, and thus, the hygroscopic ability is improved.

FIG. 5 is a schematic plan view of a substrate for the dual panel typeOELD device according to the second embodiment of the present invention,and shows the second substrate including the moisture absorption layer.

In FIG. 5, a plurality of pixel areas P, each of which is a minimum unitfor an image, is defined on a substrate 250 and spaced apart from eachother. A space between the pixel areas P is referred to as a non-pixelarea NP. A moisture absorption layer 262 is formed corresponding to thenon-pixel area NP.

An insulating pattern 254 and a partition wall 256 of FIG. 4 aresequentially formed under the moisture absorption layer 262. In fact,the moisture absorption layer 262 is separated from a second electrode260 formed in the pixel area P due to a thickness of the partition wall256.

FIGS. 6A to 6C show a dual panel type OELD device according to a thirdembodiment of the present invention. FIG. 6A is a cross-sectional viewof the dual panel type OELD device, FIG. 6B is a view magnifying theregion B of FIG. 6A, and FIG. 6C is a plan view of a substrate for thedual panel type OELD device. The parts different from the firstembodiment will be explained.

In this embodiment, a sub partition wall 355 of a square frame shapesurrounds a pixel area P. In a non-pixel area NP between the pixel areasP, adjacent sub partition walls 355, which are spaced apart from eachother, form a double partition wall 356. In this embodiment, because anorganic light-emitting layer 358 and a second electrode 360 are alsodivided by the double partition wall 356, which includes a standoff areaSA, the second electrode 360 is securely separated as compared with thesingle partition wall of the previous embodiments.

Here, a moisture absorption layer 362 is formed in the standoff area SAin the double partition wall 356. A width and a thickness of themoisture absorption layer 362 depend on a width and a thickness of thestandoff area SA. According to the third embodiment, the structure ofthe moisture absorption layer 362 is more stable than that of the secondembodiment, and the moisture absorption layer 362 is formed in thestandoff area SA, thereby reducing the probability that other layers maybe damaged by the moisture absorption layer 362. Additionally, it iseasy to improve the hygroscopic ability by controlling the dimensions ofthe standoff area SA.

Reverse-tapered sides of the double partition wall 356 correspond toinner sides of the sub partition walls 355 enclosing the pixel areas P,respectively. In the standoff area SA between the sub partition walls355, the moisture absorption layer 362 is formed. The structure thatouter sides of the sub partition walls 355 (that face the standoff areaSA) are vertical with respect to the substrate facilitates themanufacture of the device. The moisture absorption layer 362 may beformed of the same material and through the same process as the secondembodiment.

Although not described in the second and third embodiments, the organiclight-emitting layer and the second electrode are formed in the mostouter area of the partition wall. A deposition order of the organiclight-emitting layer and the second electrode with the moistureabsorption layer depends on the manufacturing process.

FIG. 7 is a flow chart illustrating a manufacturing process of a dualpanel type OELD device according to the present invention.

At step ST1, an array element layer including a plurality of thin filmtransistors is formed on a first substrate and a plurality of connectionpatterns are formed on the array element layer. Each connection patternis connected to the respective thin film transistor.

The array element layer also includes a plurality of gate lines, datalines and power lines. The thin film transistors include a switchingthin film transistor that is formed at a crossing portion of the gateand data lines and a driving thin film transistor that is connected to adrain electrode of the switching thin film transistor and the powerline. The driving thin film transistor provides the organicelectroluminescent diode with currents. In the examples above, theaforementioned thin film transistors indicate the driving thin filmtransistor.

The plurality of connection patterns is at least in part formed of aconductive material. Each connection pattern may include a projectedpattern of an organic material and a connecting electrode covering theprojected pattern and connected to the thin film transistor. Theconnection pattern may be connected to the thin film transistor throughanother electrode.

At step ST2, a first electrode is formed on an entire surface of asecond substrate. Subsequently, an insulating pattern and a partitionwall are formed on the first electrode in a non-pixel area. Thepartition wall has a predetermined thickness and has reversely taperedsides. Then, an organic light-emitting layer and a second electrode areformed. They are automatically patterned due to the partition wall. Thefirst electrode, the organic light-emitting layer, and the secondelectrode constitute an organic electroluminescent diode.

The partition wall may have a single structure or a double structure. Inthe case of the double structure with sub partition walls, the organiclight-emitting layer material and the second electrode material areformed between sub partition walls.

In an independent luminescent method, the organic light-emitting layerincludes red, green and blue luminous materials. In the case of using anadditional full color element such as color filter, the organiclight-emitting layer includes a monochromatic luminous material, forexample.

At step ST3, a moisture absorption layer is formed. In the singlestructure, the moisture absorption layer is formed on the partitionwall, and in the double structure, the moisture absorption layer isformed in a standoff area between sub partition walls. The formation ofthe moisture absorption layer includes selectively coating a sourcematerial of a liquid phase on the partition wall or in the standoff areabetween the sub partition walls through a film forming process.

The moisture absorption layer may be formed of a hygroscopic oxidematerial such as calcium oxide (CaO) or barium oxide (BaO) or otherhygroscopic insulating materials. Additionally, one of an inkjet method,a roll printing method, a screen printing method, and a bar coatingmethod may be used for coating the source material. A mask may be usedduring the step, in which the mask has an opening corresponding to anupper surface of the partition wall (in the single structure) or thestandoff area between the sub partition walls (in the double structure).

At step ST4, the first and second substrates are faced such that theconnection pattern corresponds to the organic electroluminescent diode,and then are attached. Before attaching the substrates, a seal patternis formed on one of the first and second substrates in peripheralregions. Therefore, the peripheral portions of the first and secondsubstrates are sealed by the seal pattern during the attaching step.

The inside of the first and second substrates is made vacuous throughthe attaching step. The moisture absorption layer removes moisture thatmay remain in or enter the device to thereby increase the lifespan ofthe device and reduce problems. Moreover, since the moisture absorptionlayer is formed in a partition wall region, no additional space isrequired to install the moisture absorption element.

As described below, the moisture absorption layer may be formed on asubstrate including a thin film transistor.

FIG. 8 is a cross-sectional view of a dual panel type OELD deviceaccording to a fourth embodiment of the present invention. The partsdifferent from the first embodiment will be mainly explained.

As illustrated in FIG. 8, the dual panel type OELD device includes afirst substrate 410 and a second substrate 450 that are spaced apart andface each other. An array element layer A including a thin filmtransistor T is formed on an inner surface of the first substrate 410. Aconnection pattern 440 connected to the thin film transistors T isformed on the array element layer A.

An organic electroluminescent diode E is formed on an inner surface ofthe second substrate 450 and is connected to the connection pattern 440.A seal pattern 470 is formed along peripheral portions of the first andsecond substrates 410 and 450. The organic electroluminescent diode Ehas the same structure as that of the previous embodiments.

In the related art, the inside of the OELD device may be filled withnitrogen gas (N2). In contrast, the inside of the dual panel type OELDdevice may be vacuum.

A moisture absorption layer 442 is formed over the first substrate 410,and covers all regions except the connection pattern 440 so that themoisture absorption layer 442 may not interrupt the electricalconnection of the connection pattern 440 and the organicelectroluminescent diode E. The moisture absorption layer 442 isdisposed inside the seal pattern 470.

The moisture absorption layer 442 may be formed of an insulatingmaterial having a hygroscopic property. The moisture absorption layer442 may be formed of calcium oxide (CaO) or barium oxide (BaO). Themoisture absorption layer 442 may be formed by one of an inkjet method,a roll printing method, a screen printing method, and a bar coatingmethod using a source material of a liquid phase.

FIG. 9 is a plan view illustrating a lower substrate for the dual paneltype OELD device of FIG. 8. As shown in FIG. 9, a gate line 412 isformed in a first direction on a substrate, and a data line 420 and apower line 432 are formed in a second direction crossing the firstdirection and are spaced apart from each other. A switching thin filmtransistor Ts is formed at a crossing portion of the gate line 412 andthe data line 420.

The switching thin film transistor Ts includes a first gate electrode414 that extends from the gate line 412, a first source electrode 422that extends from the data line 420, a first drain electrode 424 that isspaced apart from the first source electrode 422, and a firstsemiconductor layer 418. The first semiconductor layer 418 overlaps thefirst gate electrode 414, the first source electrode 422 and the firstdrain electrode 424, and has an island pattern shape.

A second gate electrode 428 is connected to the first drain electrode424, and a second semiconductor layer 430 covers the second gateelectrode 428. A second source electrode 434 and a second drainelectrode 438 are spaced apart from each other over the secondsemiconductor layer 430. The second source electrode 434 and the seconddrain electrode 438 have island pattern shapes. A power electrode 433extends from the power line 432 and is connected to the second sourceelectrode 434. The second gate electrode 428, the second semiconductorlayer 430, the second source electrode 434, and the second drainelectrode 438 constitute a driving thin film transistor Td.

A first capacitor electrode 426 extends from the first drain electrode424 and a second capacitor electrode 436 extends from the power line432. The first capacitor electrode 426 and the second capacitorelectrode 436 overlap each other to form a storage capacitor Cst with aninsulating layer therebetween.

A connection pattern 440 is connected to the second drain electrode 438,and a moisture absorption layer 442 is formed on an entire surface of ahatched region, which excludes the connection pattern 440, as shown inFIG. 9. Because the moisture absorption layer 442 is formed on thesubstrate including the connection pattern 440, the moisture absorptionlayer 442 may cover a connecting portion of the connection pattern 440connected to the drain electrode 438.

As stated above, the moisture absorption layer 442 is formed of an oxidematerial such as calcium oxide (CaO) and barium oxide (BaO) or a liquidtype insulating material having a hygroscopic property. Thus, themoisture absorption layer 442 may be formed to cover the gate line 412,the data line 420, the power line 432, the switching thin filmtransistor Ts, and the driving thin film transistor Td.

The hygroscopic ability of the moisture absorption layer 442 isproportional to its size. In this embodiment, since the moistureabsorption layer 442 is formed over the entire surface of the substrateexcept the regions corresponding to the connection patterns 440, thehygroscopic ability in the dual panel type OELD device is improved.

As described below, a dual panel type OELD device of the presentinvention may include an additional full color element and an organiclight-emitting layer of a monochromatic luminous material.

FIG. 10 is a cross-sectional view of a dual panel type OELD deviceaccording to a fifth embodiment of the present invention. The dual paneltype OELD device includes a color filter layer as the full colorelement.

As shown in FIG. 10, a first substrate 510 and a second substrate 550are spaced apart from and facing each other. A color filter layer 552and a black matrix 554 are formed on an inner surface of the secondsubstrate 550. The color filter layer 552 includes red, green and bluesub-color filters 552 a, 552 b and 552 c, and the black matrix 554 isdisposed between adjacent sub-color filters 552 a, 552 b and 552 c ofthe color filter layer 552. An overcoat layer 558 and a barrier layer560 are sequentially formed on the color filter layer 552 and the blackmatrix 554. The overcoat layer 558 planarizes a surface of the secondsubstrate 550 including the color filter layer 552 and the black matrix554. The barrier layer 560 prevents outgassing from the color filterlayer 552.

A first electrode 562 is formed on the barrier layer 560, and aninsulating pattern 564 and a partition wall 566 are sequentially formedon the first electrode 562 in a non-pixel area. The partition wall 566has reversely tapered sides and a certain thickness. An organiclight-emitting layer 568 and a second electrode 570 are sequentiallyformed on the first electrode 562 between adjacent partition walls 566and between adjacent insulating patterns 564. The organic light-emittinglayer 568 and the second electrode 570 are automatically patterned dueto the partition wall 566, and do not require additional patterningprocesses.

The organic light-emitting layer 568 is formed of a monochromaticluminous material, which may emit white light, for example.

The first electrode 562, the second electrode 570, and the organiclight-emitting layer 568 constitute an organic electroluminescent diodeE.

An array element layer A including a thin film transistor T is formed onan inner surface of the first substrate 510. A connection pattern 540 isformed on the array element layer A and is connected to the thin filmtransistor T. The connection pattern 540 also contacts the secondelectrode 570 and electrically connects the thin film transistor T tothe organic electroluminescent diode E.

A moisture absorption layer 542 is formed over an entire surface of thefirst substrate 510 inside a seal pattern 571, and covers the arrayelement layer A except the regions corresponding to the connectionpatterns 540.

A double structure of a color filter layer and color-changing mediums(CCM) may be used as the full color element. In such a case, the organiclight-emitting layer emits only substantially monochromatic light of asubstantially single wavelength. For example, the organic light-emittinglayer emits blue light.

FIG. 11 is a flow chart illustrating a manufacturing process of anexample of a dual panel type OELD device according to the presentinvention.

At step ST11, an array element layer including a thin film transistor isformed on a first substrate and a connection pattern is formed on thearray element layer. The connection pattern is connected to the thinfilm transistor.

The array element layer also includes a gate line, a data line, a powerline, and a storage capacitor. The thin film transistor include aswitching thin film transistor that is formed at a crossing portion ofthe gate and data line and a driving thin film transistor that isconnected to a drain electrode of the switching thin film transistor andthe power line.

At step ST12, a mask is disposed over the first substrate including theconnection pattern, in which the mask has an opening except the regioncorresponding to the connection pattern. Next, a moisture absorptionmaterial of a liquid phase is coated on the first substrate through theopening of the mask by using an ink-jet method. The moisture absorptionmaterial is coated inside a seal pattern, which is to be formed at theperiphery. Besides the ink-jet method, one of a roll printing method, ascreen printing method and a bar coating method may be used.

At step ST13, a moisture absorption layer is formed by curing the coatedmoisture absorption material.

At step ST14, an organic electroluminescent diode is formed on a secondsubstrate. The organic electroluminescent diode includes a firstelectrode, a second electrode, and an organic light-emitting layerinterposed therebetween.

At step ST15, a seal pattern is formed in a peripheral portion of one ofthe first and second substrates, and then the first and secondsubstrates are attached through the seal pattern. In this step, theconnection pattern is electrically connected to the organicelectroluminescent diode, and the cavity defined by the first and secondsubstrates is made vacuous.

In the above examples, the thin film transistor has an invertedstaggered structure and includes amorphous silicon. However, the thinfilm transistor may have a top gate structure using polycrystallinesilicon.

As described below, the moisture absorption layer may be formed of aconductive material.

FIG. 12A is a plan view illustrating a substrate for a dual panel typeOELD device according to a sixth embodiment of the present invention andFIG. 12B is a cross-sectional view along the line XII-XII of FIG. 12A.The sixth embodiment enables use of a moisture absorption layer that ismade of an electrically conductive material.

As shown in FIGS. 12A and 12B, a gate line 614 is formed in a firstdirection on a substrate 610, and a first gate electrode 612 extendsfrom the gate line 614. A connection line 616 of an island pattern shapeis formed in a second direction and is spaced apart from the first gateelectrode 612 and the gate line 614. The connection line 616 has bentportions. One end of the connection line 616 is located adjacent thefist gate electrode 612. A second gate electrode 618 extends from theconnection line 616.

A gate insulating layer 620 covers the first gate electrode 612, thegate line 614, the connection line 616, and the second gate electrode618. A first semiconductor layer 622 and a second semiconductor layer624 are formed on the gate insulating layer 620 over the first gateelectrode 612 and the second gate electrode 618, respectively. Thesecond semiconductor layer 624 includes an active layer 624 a of undopedamorphous silicon and an ohmic contact layer 624 b of doped amorphoussilicon. The first semiconductor layer 622 has the same structure as thesecond semiconductor layer 624. The gate insulating layer 620 has afirst contact hole 630 exposing a part of the connection line 616.

A data line 632 and the first capacitor electrode 638 are formed on thegate insulating layer 620. The data line 632 is formed in the seconddirection crossing the first direction and includes a first sourceelectrode 634.. The first drain electrode 636 is spaced apart from thefirst source electrode 634 and is connected to the connection line 616through the first contact hole 630. The first drain electrode 636 andthe first source electrode 634 overlap the first semiconductor layer 622at the respective sides. The first capacitor electrode 638 extends fromthe first drain electrode 636.

A second source electrode 640 and a second drain electrode 642 areformed on the second semiconductor layer 624. The second sourceelectrode 640 and the second drain electrode 642 have island patternshapes and overlap the respective sides of the second semiconductorlayer 624.

The first gate electrode 612, the first semiconductor layer 622, thefirst source electrode 634, and the first drain electrode 636 constitutea switching thin film transistor Ts. The second gate electrode 618, thesecond semiconductor layer 624, the second source electrode 640, and thesecond drain electrode 642 constitute a driving thin film transistor Td.

The switching thin film transistor Ts controls voltage applied to thesecond gate electrode of the driving thin film transistor Td inaccordance with the voltages applied to the gate line 614 and the dataline 632. As a result, the driving thin film transistor Td controls thebrightness of emission light through controlling a current through thepower line 652 in accordance with the voltages applied to the switchingthin film transistor Ts.

A first passivation layer 646 covers the switching thin film transistorTs and the driving thin film transistor Td. The first passivation layer646 has a second contact hole 644 exposing a part of the second sourceelectrode 640.

A power line 652 is formed in the second direction on the firstpassivation layer 646 and is spaced apart from the data line 632. Apower electrode 648 and a second capacitor electrode 650 extend from thepower line 652. The power electrode 648 is connected to the secondsource electrode 640 through the second contact hole 644. The secondcapacitor electrode 650 overlaps the first capacitor electrode 638. Thefirst and second capacitor electrodes 638 and 650 constitute a storagecapacitor Cst with the first passivation layer 646 interposedtherebetween.

A pixel area P is defined by crossing of the gate line 614, the dataline 632 and the power line 652.

A second passivation layer 656 covers the power line 652, the powerelectrode 648 and the second capacitor electrode 650. The secondpassivation layer 656 has a third contact hole 654 exposing a part ofthe second drain electrode 642 through the first passivation layer 646.A projecting pattern 658 of a predetermined thickness is formed on thesecond passivation layer 656 in the pixel area P. The projecting pattern658 is located adjacent the third contact hole 654. A connectionelectrode 660 covers the projecting pattern 658, and is connected to thesecond drain electrode 642 through the third contact hole 654. Theprojecting pattern 658 and the connection electrode 660 constitute aconnection pattern 662.

A moisture absorption layer 664 is formed on the second passivationlayer 656 over the storage capacitor Cst. The moisture absorption layer664 may be made of a hygroscopic metal material that can remove moistureof the device.

In this embodiment, if the moisture absorption layer 664 is made of ametal material, which has a thin film form through a depositing process,the moisture absorption layer 664 preferably should not be formed overthe thin film transistors and the metal lines, such as the gate line,the data line, and the power line. More specifically, if theelectrically conductive moisture absorption layer 664 is formed over thethin film transistor or the metal lines, a parasitic capacitor may formto cause a signal delay or poor images. Accordingly, it is desirable toform the moisture absorption layer in a region where there is no thethin film transistor or the metal lines underneath, such as where thestorage capacitance is located as in this example.

The hygroscopic metal material that can be used in the presentembodiment may be a getter material that improves the degree of vacuumand removes the moisture. The getter material may include an element ofgroup 4 such as zirconium (Zr), titanium (Ti) and hafnium (Hf), anelement of group 5 such as vanadium (V), niobium (Nb) and tantalum (Ta),an element of group 6 such as chromium (Cr), molybdenum (Mo) andtungsten (W), an element of group 8 such as iron (Fe), ruthenium (Ru)and osmium (Os), an element of group 10 such as nickel (Ni), or anelement of group 9 such as cobalt (Co), where the scheme used for thegroup label is numeric and follows the current IUPAC (InternationalUnion of Pure and Applied Chemistry) convention. The getter material mayalso include elements of groups 1, 11, 13, 15, 16, 17, or 18. Thehygroscopic metal material may be formed by a sputtering method or anevaporation method, for example.

FIG. 13 is a cross-sectional view of a dual panel type OELD deviceaccording to the sixth embodiment of the present invention. The sameparts as in FIG. 12B may be briefly explained.

As shown in FIG. 13, a first substrate 710 and a second substrate 750are spaced apart from and facing each other. A thin film transistor T isformed on an inner surface of the first substrate 710. The thin filmtransistor T includes a gate electrode 718, a semiconductor layer 724, asource electrode 740 and a drain electrode 742. A first capacitorelectrode 738 is formed of the same material and in the same layer asthe source and drain electrodes 740 and 742. A power line 752 is formedon a first passivation layer 746. The power line 752 includes a powerelectrode 748 and a second capacitor electrode 750. The power electrode748 is connected to the source electrode 740, and the second capacitorelectrode 750 overlaps the first capacitor electrode 738. The first andsecond capacitor electrodes 738 and 750 constitute a storage capacitorCst with the first passivation layer 746 therebetween.

A second passivation layer 756 covers the storage capacitor Cst and thethin film transistor T, and a connection pattern 762 is formed on thesecond passivation layer 756. The connection pattern 762 is connected tothe thin film transistor T. A moisture absorption layer 764 is formed onthe second passivation layer 756 at a location corresponding to thestorage capacitor Cst.

A first electrode 772 is formed on an entire inner surface of the secondsubstrate 770. An insulating pattern 774 and a partition wall 776 aresequentially formed on the first electrode 772 in a non-pixel area NP.The partition wall 766 has reversely tapered sides with respect to thesecond substrate 770 and has a certain thickness. An organiclight-emitting layer 778 and a second electrode 780 are sequentiallyformed on the first electrode 772 between adjacent partition walls 776and between adjacent insulating patterns 774. The organic light-emittinglayer 778 and the second electrode 780 are automatically patterned dueto the partition wall 776 without additional patterning processes. Thesecond electrode 780 contacts the connection pattern 762.

The first electrode 772, the second electrode 780, and the organiclight-emitting layer 778 constitute an organic electroluminescent diodeE. The first electrode 772 is transparent, and thus the device has a topemission mode. For example, the first electrode 772 may be an anodeelectrode and the second electrode 780 may be a cathode electrode. Inthis case, the first electrode 772 may be formed of a transparentconductive material such as indium tin oxide (ITO).

Although not shown in FIG. 13, the organic light-emitting layer 778 maybe formed as an independent luminescent method, where red, blue greenluminous layers are sequentially formed at the respective pixels.Alternatively, a monochromatic luminous layer may be used as the organiclight-emitting layer, and a single structure of a color filter layer ora double structure of a color filter layer and color-changing mediums(CCM) may be used as a full color element.

In embodiments of the present invention, since the array element and theorganic electroluminescent diode are formed on different substrates, theyield and productivity are improved and the life span of the device isincreased.

The dual panel type OELD device has a high aperture ratio and highdefinition images because it can be operated in the top emission mode.In addition, because the organic light-emitting layer and the secondelectrode are automatically patterned due to the partition wall withouta shadow mask, the efficiency of the manufacturing process is improved.Moreover, since the moisture absorption layer is formed on one of thetop and bottom substrates, degradation of the device due to moisture canbe prevented, and efficient usage of the space is achieved.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the organicelectroluminescent display device and the method of fabricating the sameof the present invention without departing from the spirit or scope ofthe invention. Thus, it is intended that the present invention coversthe modifications and variations of this invention provided they comewithin the scope of the appended claims and their equivalents.

1. A dual panel type organic electroluminescent display device,comprising: first and second substrates facing and spaced apart fromeach other; an array element layer on an inner surface of the firstsubstrate and including a thin film transistor; a connection pattern onthe array element layer and electrically connected to the thin filmtransistor; a first electrode on an inner surface of the secondsubstrate; a partition wall on the first electrode in a non-pixel areabetween adjacent pixel areas; an organic light-emitting layer on thefirst electrode in the pixel area; a second electrode on the organiclight-emitting layer in the pixel area and electrically connected to theconnection pattern; a moisture absorption layer on the partition wall;and a seal pattern between the first and second substrates along aperipheral portion.
 2. The device according to claim 1, wherein thepartition wall has reversely tapered sides with respect to the secondsubstrate.
 3. The device according to claim 1, wherein the moistureabsorption layer is formed of an insulating material.
 4. The deviceaccording to claim 3, wherein the insulating material includes oxide. 5.The device according to claim 4, wherein the oxide includes at least oneof calcium oxide and barium oxide.
 6. The device according to claim 1,further comprising an insulating pattern between the first electrode andthe partition wall in the non-pixel area.
 7. The device according toclaim 1, wherein the first electrode functions as an anode electrode andthe second electrode functions as a cathode electrode, and wherein thefirst electrode is transparent, whereby light emitted from the organiclight-emitting layer is transmitted through the first electrode.
 8. Thedevice according to claim 1, wherein the organic light-emitting layerincludes separate red, green and blue luminous layers, which eachcorrespond to a pixel area.
 9. The device according to claim 1, furthercomprising a color filter layer between the first electrode and thesecond substrate, wherein the organic light-emitting layer emitssubstantially monochromatic light.
 10. The device according to claim 9,further comprising color-changing mediums between the first electrodeand the second substrate.
 11. The device according to claim 1, whereinthe thin film transistor function as a driving thin film transistor, andthe array element layer further includes a switching thin filmtransistor.
 12. A dual panel type organic electroluminescent displaydevice, comprising: first and second substrates facing and spaced apartfrom each other; an array element layer on an inner surface of the firstsubstrate and including a thin film transistor; a connection pattern onthe array element layer and electrically connected to the thin filmtransistor; a first electrode on an inner surface of the secondsubstrate; a partition wall on the first electrode in a non-pixel areabetween adjacent pixel areas, the partition wall including sub partitionwalls, each of which surrounds a pixel area; an organic light-emittinglayer on the first electrode in the pixel area; a second electrode onthe organic light-emitting layer in the pixel area and electricallyconnected to the connection pattern; a moisture absorption layer betweenadjacent sub partition walls; and a seal pattern between the first andsecond substrates along a peripheral portion.
 13. The device accordingto claim 12, wherein the moisture absorption layer is formed of aninsulating material.
 14. The device according to claim 13, wherein theinsulating material includes oxide.
 15. The device according to claim14, wherein the insulating material at least one of calcium oxide andbarium oxide.
 16. The device according to claim 12, further comprisingan insulating pattern between the first electrode and the partition wallin the non-pixel area.
 17. The device according to claim 12, wherein thefirst electrode functions as an anode electrode and the second electrodefunctions as a cathode electrode, and wherein the first electrode istransparent, whereby light emitted from the organic light-emitting layeris transmitted through the first electrode.
 18. The device according toclaim 12, wherein the organic light-emitting layer includes separatered, green and blue luminous layers, which each correspond to a pixelarea.
 19. The device according to claim 12, further comprising a colorfilter layer between the first electrode and the second substrate,wherein the organic light-emitting layer emits substantiallymonochromatic light.
 20. The device according to claim 19, furthercomprising color-changing mediums between the first electrode and thesecond substrate.
 21. The device according to claim 12, wherein the thinfilm transistor function as a driving thin film transistor, and thearray element layer further includes a switching thin film transistor.22. The device according to claim 12, wherein a width and a thickness ofthe moisture absorption layer are defined by a standoff area between theadjacent sub partition walls.
 23. The device according to claim 12,wherein each sub partition wall has a reversely tapered side and anormal side with respect to the second substrate.
 24. The deviceaccording to claim 23, wherein the reversely tapered side faces thepixel area as an inner side of the sub partition wall.
 25. A method offabricating a dual panel type organic electroluminescent display device,comprising: forming an array element layer on a first substrate, thearray element layer including a thin film transistor; forming aconnection pattern on the array element layer, the connection patternelectrically connected to the thin film transistor; forming a firstelectrode on a second substrate; forming a partition wall on the firstelectrode in a non-pixel area between adjacent pixel areas, thepartition wall having reversely tapered sides; forming an organiclight-emitting layer on the first electrode in the pixel area; forming asecond electrode on the organic light-emitting layer in the pixel area;forming a moisture absorption layer on the partition wall; and attachingthe first and second substrates such that the second electrode isconnected to the connection pattern.
 26. The method according to claim25, wherein the moisture absorption layer is formed of an insulatingmaterial.
 27. The method according to claim 26, wherein the insulatingmaterial includes oxide.
 28. The method according to claim 27, whereinthe insulating material includes at least one of calcium oxide andbarium oxide.
 29. The method according to claim 25, wherein forming themoisture absorption layer uses one of an ink-jet method, a roll printingmethod, a screen printing method, and a bar coating method.
 30. Themethod according to claim 25, wherein forming the moisture absorptionlayer uses a mask that includes an opening corresponding to thepartition wall.
 31. The method according to claim 25, wherein formingthe moisture absorption layer is performed between forming the partitionwall and forming the organic light-emitting layer.
 32. The methodaccording to claim 25, wherein forming the organic light-emitting layerincludes sequentially forming separate red, green and blue luminouslayers, which each correspond to a pixel area.
 33. The method accordingto claim 25, further comprising a step of forming a color filter layerbetween the first electrode and the second substrate, wherein theorganic light-emitting layer emits substantially monochromatic light.34. The method according to claim 33, further comprising a step offorming color-changing mediums between the first electrode and thesecond substrate.
 35. The method according to claim 25, furthercomprising a step of forming an insulating pattern between the firstelectrode and the partition wall in the non-pixel area.
 36. The methodaccording to claim 25, wherein forming the organic light-emitting layerincludes selectively applying a material for the organic light-emittinglayer in the pixel area using the reversely tapered sides of thepartition wall, thereby forming a pattern of the organic light-emittinglayer without using a mask, and wherein forming the second electrodeincludes selectively applying a material for the second electrode in thepixel area using the reversely tapered sides of the partition wall,thereby forming a pattern of the second electrode without using a mask.37. A method of fabricating a dual panel type organic electroluminescentdisplay device, comprising: forming an array element layer on a firstsubstrate, the array element layer including a thin film transistor;forming a connection pattern on the array element layer, the connectionpattern electrically connected to the thin film transistor; forming afirst electrode on a second substrate; forming a partition wall on thefirst electrode in a non-pixel area between adjacent pixel areas, thepartition wall having reversely tapered sides and including subpartition walls, each of which surrounds a pixel area; forming anorganic light-emitting layer on the first electrode in the pixel area;forming a second electrode on the organic light-emitting layer in thepixel area; forming a moisture absorption layer between adjacent subpartition walls; and attaching the first and second substrates such thatthe second electrode is connected to the connection pattern.
 38. Themethod according to claim 37, wherein the moisture absorption layer isformed of an insulating material.
 39. The method according to claim 38,wherein the insulating material includes oxide.
 40. The method accordingto claim 39, wherein the insulating material one of calcium oxide andbarium oxide.
 41. The method according to claim 37, wherein forming themoisture absorption layer uses one of an ink-jet method, a roll printingmethod, a screen printing method, and a bar coating method.
 42. Themethod according to claim 37, wherein forming the moisture absorptionlayer uses a mask that includes an opening corresponding to thepartition wall.
 43. The method according to claim 37, wherein formingthe moisture absorption layer is performed between forming the partitionwall and forming the organic light-emitting layer.
 44. The methodaccording to claim 37, wherein each sub partition wall has a reverselytapered side and a normal side with respect to the second substrate, thereversely tapered side facing the pixel area.
 45. The method accordingto claim 37, wherein forming the organic light-emitting layer includessequentially forming separate red, green and blue luminous layers, whicheach correspond to a pixel area.
 46. The method according to claim 37,further comprising a step of forming a color filter layer between thefirst electrode and the second substrate, wherein the organiclight-emitting layer emits substantially monochromatic light.
 47. Themethod according to claim 46, further comprising a step of formingcolor-changing mediums between the first electrode and the secondsubstrate.
 48. The method according to claim 37, further comprising astep of forming an insulating pattern between the first electrode andthe partition wall in the non-pixel area.
 49. The method according toclaim 36, wherein forming the organic light-emitting layer includesselectively applying a material for the organic light-emitting layer inthe pixel area using the reversely tapered sides of the partition wall,thereby forming a pattern of the organic light-emitting layer withoutusing a mask, and wherein forming the second electrode includesselectively applying a material for the second electrode in the pixelarea using the reversely tapered sides of the partition wall, therebyforming a pattern of the second electrode without using a mask.
 50. Adual panel type organic electroluminescent display device, comprising:first and second substrates facing and spaced apart from each other; anarray element layer on an inner surface of the first substrate andincluding a thin film transistor; a connection pattern on the arrayelement layer and electrically connected to the thin film transistor; amoisture absorption layer covering the array element layer and exposingthe connection pattern; an organic electroluminescent diode on an innersurface of the second substrate and electrically connected to theconnection pattern; and a seal pattern between the first and secondsubstrates along a peripheral portion.
 51. The device according to claim50, wherein an inside of the seal pattern between the first and secondsubstrates is substantially vacuum.
 52. The device according to claim51, wherein the moisture absorption layer is formed of an insulatingmaterial absorbing moisture and gases.
 53. The device according to claim52, wherein the insulating material includes oxide.
 53. The deviceaccording to claim 52, wherein the insulating material includes at leastone of calcium oxide and barium oxide.
 55. The device according to claim50, wherein the moisture absorption layer is disposed inside the sealpattern.
 56. The device according to claim 50, wherein the organicelectroluminescent diode includes an organic light-emitting layercomposed of separate red, green and blue luminous layers.
 57. The deviceaccording to claim 50, further comprising a color filter layer betweenthe organic electroluminescent diode and the second substrate, whereinan organic light-emitting layer of the organic electroluminescent diodeemits substantially monochromatic light.
 58. The device according toclaim 57, further comprising color-changing mediums between the organicelectroluminescent diode and the second substrate.
 59. The deviceaccording to claim 50, wherein the organic electroluminescent diodeincludes a first electrode, an organic light-emitting layer, a secondelectrode, and a partition wall, the first electrode being disposed onan entire surface of the second substrate, the partition wall havingreversely tapered sides, boundaries of the organic light-emitting layerand the second electrode being defined by the partition wall.
 60. Thedevice according to claim 50, wherein the thin film transistor functionsas a driving thin film transistor, which provides the organicelectroluminescent diode with an electric current.
 61. The deviceaccording to claim 50, wherein the array element layer includes aplurality of gate lines formed in a first direction, a plurality of datalines crossing the plurality of gate lines, a plurality of power linesparallel to the plurality of data lines, a switching thin filmtransistor at each crossing of the gate and data lines, and a drivingthin film transistor connected to a drain electrode of the switchingthin film transistor and the corresponding power line, wherein theconnection pattern is connected to a drain electrode of the driving thinfilm transistor, and wherein the moisture absorption layer covers theplurality of gate lines, data lines and power lines, the switching thinfilm transistor and the driving thin film transistor.
 62. A method offabricating a dual panel type organic electroluminescent display device,comprising: forming an array element layer on a first substrate, thearray element layer including a thin film transistor; forming aconnection pattern on the array element layer, the connection patternelectrically connected to the thin film transistor; forming a moistureabsorption layer covering the array element layer and exposing theconnection pattern; forming an organic electroluminescent diode on asecond substrate; forming a seal pattern on one of the first substrateand the second substrate along a peripheral portion; and attaching thefirst and second substrates such that the organic electroluminescentdiode is connected to the connection pattern.
 63. The method accordingto claim 62, wherein an interior defined by the seal pattern between thefirst and second substrates is made vacuum after attaching the first andsecond substrates.
 64. The method according to claim 62, wherein formingthe moisture absorption layer includes coating a hygroscopic material ofa liquid state on the first substrate.
 65. The method according to claim64, wherein the hygroscopic material includes a material absorbingmoisture and gases and a solvent.
 66. The method according to claim 64,wherein coating the hygroscopic material uses one of an ink-jet method,a roll printing method, a screen printing method, and a bar coatingmethod.
 67. The method according to claim 65, wherein coating thehygroscopic material uses a mask that has an opening corresponding to aportion except an area corresponding to the connection pattern.
 68. Adual panel type organic electroluminescent display device, comprising:first and second substrates facing and spaced apart from each other; aplurality of gate lines, a plurality of data lines and a plurality ofpower lines on the first substrate, the plurality of gate lines crossingthe plurality of data lines and the plurality of power lines to define aplurality of pixel areas; a switching element at each pixel area, theswitching element including a switching thin film transistor and adriving thin film transistor; a storage capacitor at each pixel area andconnected to the switching element; a connection pattern electricallyconnected to the driving thin film transistor; a moisture absorptionlayer of a hygroscopic conductive material over the storage capacitor;an organic electroluminescent diode on an inner surface of the secondsubstrate and including a first electrode, an organic light-emittinglayer and a second electrode, wherein the organic electroluminescentdiode is electrically connected to the connection pattern.
 69. Thedevice according to claim 68, wherein the hygroscopic conductivematerial includes a getter material that improves the degree of vacuumand removes moisture.
 70. The device according to claim 69, wherein thegetter material includes at least one of the elements of group 4 such aszirconium (Zr), titanium (Ti) and hafnium (Hf), the elements of group 5such as vanadium (V), niobium (Nb) and tantalum (Ta), the elements ofgroup 6 such as chromium (Cr), molybdenum (Mo) and tungsten (W), theelements of group 8 such as iron (Fe), ruthenium (Ru) and osmium (Os),the elements of group 10 such as nickel (Ni), and the elements of group9 such as cobalt (Co), wherein the scheme used for the group label isnumeric and follows the current IUPAC (International Union of Pure andApplied Chemistry) convention.
 71. The device according to claim 69,wherein the getter material includes at least one of zirconium (Zr),titanium (Ti), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta),chromium (Cr), molybdenum (Mo), tungsten (W), iron (Fe), ruthenium (Ru),osmium (Os), nickel (Ni), and cobalt (Co).
 72. The device according toclaim 69, wherein the getter material includes at least one of theelements of groups 1, 11, 13, 15, 16, 17, or 18, wherein the scheme usedfor the group label is numeric and follows the current IUPAC(International Union of Pure and Applied Chemistry) convention.
 73. Thedevice according to claim 68, wherein the moisture absorption layer isformed by a deposition method.
 74. The device according to claim 73,wherein the deposition method is one of a sputtering method and anevaporation method.
 75. The device according to claim 68, wherein theorganic light-emitting layer includes separate red, green and blueluminous layers, which each correspond to a pixel area.
 76. The deviceaccording to claim 68, further comprising a color filter layer betweenthe organic electroluminescent diode and the second substrate, whereinthe organic light-emitting layer emits substantially monochromaticlight.
 77. The device according to claim 76, further comprisingcolor-changing mediums between the organic electroluminescent diode andthe second substrate.
 78. The device according to claim 68, furthercomprising an insulating pattern and a partition wall on the firstelectrode in a non-pixel area between adjacent pixel areas, wherein thefirst electrode is formed on an entire surface of the second substrateand the partition wall has reversely tapered sides, whereby boundariesof the organic light-emitting layer and the second electrode are definedby the partition wall.
 79. The device according to claim 68, wherein thefirst electrode is transparent so that light emitted from the organiclight-emitting layer is transmitted through the first electrode.
 80. Thedevice according to claim 79, wherein the first electrode functions asan anode electrode and the second functions as a cathode electrode, andthe first electrode is formed of a transparent conductive material. 81.The device according to claim 68, wherein the plurality of power linesare parallel to the plurality of data lines.
 82. The device according toclaim 81, wherein the switching thin film transistor is formed at eachcrossing of the gate and date lines and connected to the gate and datalines, and wherein the driving thin film transistor is connected to thepower line and the switching thin film transistor.
 83. The deviceaccording to claim 82, wherein each of the switching thin filmtransistor and the driving thin film transistor includes a gateelectrode, a semiconductor layer, a source electrode and a drainelectrode, and wherein the storage capacitor includes a first capacitorelectrode that is connected to the drain electrode of the switching thinfilm transistor, a second capacitor electrode that is connected to thepower line, and an insulating layer that is interposed between the firstand second capacitor electrodes.
 84. A dual panel type organicelectroluminescent display device, comprising: first and secondsubstrates facing and spaced apart from each other; a pixel driving parton an inner surface of the first substrate, the pixel driving partincluding a metal line group and a thin film transistor, the metal linegroup including a gate line, a data line and a power line, the thin filmtransistor being activated by voltage applied by the metal line group; aconnection pattern on the pixel driving part and electrically connectedto the thin film transistor; an organic electroluminescent diode on aninner surface of the second substrate and electrically connected to thethin film transistor through the connection pattern; and a moistureabsorption layer on the pixel driving part except areas corresponding tothe metal line group and the thin film transistor, the moistureabsorption layer including a hygroscopic conductive material.
 85. A dualpanel type organic electroluminescent display device, comprising: firstand second substrates facing and spaced apart from each other; a thinfilm transistor on an inner surface of the first substrate; a connectionpattern connected to the thin film transistor; an organicelectroluminescent diode on an inner surface of the second substrate andelectrically connected to the thin film transistor through theconnection pattern; and a moisture absorption layer on an inner surfaceof one of the first and second substrates.